Yong-Hoon Cho
Korea Advanced Institute of Science and Technology (KAIST), Republic of Korea
Title: Group III-Nitride Semiconductor Nanostructures for Novel Photonic Applications
Biography
Biography: Yong-Hoon Cho
Abstract
Group III-nitride semiconductor nanostructures have attracted much attention due to their rich and unique optical properties and their versatile applications. Here, we present various nitride-based quantum nanostructures grown on pyramidal, annular, columnar, and tapered structures by using metal-organic chemical vapor deposition (MOCVD). First, we demonstrated multi-color and broadband visible light emitting diodes based on GaN hexagonal nano-pyramid and annular structures. Second, GaN-based rod structures were directly fabricated on Si substrates and then InGaN/GaN multiple quantum wells (QWs) were deposited on the surface of GaN rods. By using tapered GaN/InGaN core−shell QW semiconductor rods having a large gradient in their bandgap energy along their growth direction, highly asymmetric photonic diode behavior was observed. Finally, we demonstrate a novel approach of the self-aligned deterministic coupling of single quantum dots (QDs) to nanofocused plasmonic modes. Using this approach, we achieved strong spontaneous emission enhancement of QDs over a wide spectral range of ~150 meV.
